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Our wide STPOWERproduct portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management.

Maximum junction temperature up to 175 ☌.

(i) Non Punch Through IGBT NPT-IGBT igbt-. Read & Download PDF Insulated Gate Bipolar Transistor IGBT Theory and Design (Ieee Press Series on Microelectronic Systems) Free, Update the latest version.

Best trade-off between conduction and switch-off energy losses Insulated Gate Bipolar Junction Transistor (IGBTs) are normally classified into two types.

Our IGBTs are available in bare die as well as packaged discrete components. Six IGBTMOD 100 Amperes/1200 Volts, IGBT POWER TRANSISTOR MODULES HIGH POWER. This content was uploaded by our users and we assume good faith they have the permission to share this book. Offering an optimal trade-off between switching performance and on-state behavior (variant), ST's IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers. Specifications 100 Amp, 600 Volt, POWER TRANSISTOR Datasheet Download. 438 downloads 1690 Views 31MB Size Report. ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1700 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies.